Ee2072 L226 Semiconductors

Content 1.ObjectivePage 2 2.Equipment and Components 2 3.Introduction 3 4.Four-Point canvas 4 4.1Theory 4 4.2 prove 7 4.2.1Four-Point Probe Station 4.2.2Four-Point Probe standard 4.2.3Discussion 5. dorm Effect 11 5.1Theory 5.2Experiment 5.2.1antechamber Effect Measurement 5.2.2Discussion 6.Advantages and Disadvantages 15 6.1Four-point probes measurement 6.2Hall effect measurement 7.Photoconductivity of Light mutualist Resitor (LDR) 16 1. Theory 2. Experiment 8.Conclusion 20 9.Appendix 21 1Objective The objectives of the try are: a) development the four-point probe technique to forge the resistivity, dross concentration and holder wave mobility of silicon en specimens. b) Using Hall effect measurement to determine the dopant/carrier type, Hall coeffic ient, carrier concentration, conductivity and carrier mobility of germanium samples.

c) To study the photoconductivity of a Light Dependent resistivity (LDR) 2Equipment and components Four-point probe station Electromagnet digital gaussmeter Source measurement unit Digital multimeter DC power supply Silicon wafers (x2) Mounted germanium samples (x2) 3 Introduction Electrical characterization of worldlys evolved in three levels of understanding. In the proto (prenominal) 1800s, the resistance R and con! ductance G were treated as careful physical quantities obtainable from two-terminal I-V measurements (i.e. current I, voltage V). Different sample shapes gave different resistance values. This led to the understanding (second level) that an intrinsic genuine property like resistivity (or conductivity) is...If you want to get a full essay, order it on our website: OrderCustomPaper.com

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